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| IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 RDS(on) PDC V V V V S DD GSG =G S 0 =D 12 0A = 12 0B 12 = = = 1200 V 8.0 A 1.5 250 W Maximum Ratings 1200 1200 20 30 8 40 8 TBD 5 >200 250 A A A mJ V/ns V/ns W W W C/W C/W PDC PDHS PDAMB RthJC RthJHS Tc = 25C, Derate 4.4W/C above 25C Tc = 25C 180 3.0 0.60 0.85 Features min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250 VGS = 20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C typ. max. V * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials 1200 4 4.9 6 100 50 1 1.4 4 -55 175 -55 300 3.5 + 175 5.5 6.5 +175 V nA A mA S C C C C g VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 20 V, ID = 0.5ID25, pulse test Advantages * High Performance RF Z-MOSTM * Optimized for RF and high speed switching at frequencies to 100MHz * Common Source RF Package * Easy to mount--no insulators needed IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF=Is, VGS=0 V, Pulse test, t 300 s, duty cycle 2% VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz typ. 0.3 1900 86 11 33 4 5 4 6 39 11 19 max. pF pF pF pF ns ns ns ns nC nC nC Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 8 48 1.5 200 A V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,731,002 5,017,508 5,486,715 6,727,585 IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Fig. 1 Gate Charge vs. Gate-to-Source Voltage VDS = 600V, ID = 4A, IG = 3m A Fig. 2 Typical Output Characteristics 15 7.5V 8V - 12V 16 Gate-to-Source Voltage (V) 14 12 10 8 6 4 2 0 0 20 40 60 80 ID , Drain Currnet (A) 10 7V 5 6.5V 0 0 10 20 30 40 50 60 Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics V DS = 60V, PW = 30uS 25 Fig. 4 Extended Typical Output Characteristics 25 Top 9V - 12V 8V 7.5V 7V 6.5V ID, Drain Currnet (A) ID , Drain Current (A) 20 15 10 5 0 5 6 7 8 9 10 11 12 V GS , Gate-to Source Voltage (V) 20 Bottom 15 10 5 0 0 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Fig. 5 10000 V DS vs. Capactiance Ciss C a p a cita n ce (p F) 1000 100 Coss Crss 10 1 0 100 200 300 400 500 600 700 800 900 1000 VDS Voltage (V) IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Fig. 6 Package Drawing 120: 1=G, 2=D, 3=S 120A: 1=G, 2=S, 3= D 120B: 1=D, 2=S, 3=G Doc #dsIXZR08N120A/B REV 05/09 (c) 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com |
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